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182401-阳离子型与非离子型表面活性剂的复配对阻挡层 化学机械抛光的影响

   作者:王建超,刘玉岭,等    单位:河北工业大学电子信息工程学院    日期:2019-01-03     浏览:674    评论:0    
提示:中文核心期刊,中国科技核心期刊!DOI: 10.19289/j.1004-227x.2018.24.001阳离子型与非离子型表面活性剂的复配对阻挡层化学机械
 

中文核心期刊,中国科技核心期刊!


DOI: 10.19289/j.1004-227x.2018.24.001

阳离子型与非离子型表面活性剂的复配对阻挡层化学机械抛光的影响

王建超,刘玉岭*,牛新环,杨盛华,张凯,周佳凯,张辉辉(河北工业大学电子信息工程学院,天津市电子材料与器件重点实验室,天津 300130)

摘要:通过化学机械抛光(CMP)对铜晶圆表面进行平坦化处理,研究了碱性抛光液中阳离子型表面活性剂FAOA 和非离子型表面活性剂AEO 复配对表面缺陷去除效果的影响。结果显示:抛光液中加入3 ~ 10 mL/L FAOA 后,晶圆表面缺陷数量从大于30 000 个降到1 100 个以内。以6 mL/L AEO 与3 mL/L FAOA 复配时,CMP 后晶圆表面的缺陷数量降至420 个左右。

关键词:铜晶圆;阻挡层;化学机械抛光;表面活性剂;复配

中图分类号:TN305.2 

文献标志码:A

文章编号:1004 – 227X (2018) 24 – 1119 – 04

Effect of combination of cationic and nonionic surfactants on chemically mechanical polishing of barrier layer// WANG Jian-chao, LIU Yu-ling*, NIU Xin-huan, YANG Sheng-hua, ZHANG Kai, ZHOU Jia-kai, ZHANG Hui-hui

Abstract: Copper wafer was flattened through chemically mechanical polishing (CMP). The effect of the combination of FAOA (a cationic surfactant) and AEO (a nonionic surfactant) in alkaline polishing solution on removal efficiency of defects was studied. The results showed that the number of defects on wafer surface was reduced from over 30 000 to less than 1 100 when using a polishing solution containing 3-10 mL/L FAOA, while was reduced to about 420 in the presence of 6 mL/L AEO and 3 mL/L FAOA.

Keywords: copper wafer; barrier layer; chemically mechanical polishing; surfactant; combination

First-author’s address: Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300130, China

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