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190802-化学机械抛光后清洗工艺对多孔低k 介质的影响

   作者:韩春宇,檀柏梅,高宝红    单位:河北工业大学电子信息工程学院    日期:2019-05-17     浏览:152    评论:0    
提示:中文核心期刊,中国科技核心期刊!DOI: 10.19289/j.1004-227x.2019.08.002化学机械抛光后清洗工艺对多孔低k 介质的影响韩春宇1,

中文核心期刊,中国科技核心期刊!   



DOI: 10.19289/j.1004-227x.2019.08.002

化学机械抛光后清洗工艺对多孔低k 介质的影响

韩春宇1, 2,檀柏梅1, 2, *,高宝红1, 2,杨柳1, 2,刘宜霖3,王昊1, 2,藏俊生1, 2,王慧1, 2(1.河北工业大学电子信息工程学院,天津 300130;2.天津市电子材料与器件重点实验室,天津 300130;3.中国电子科技集团公司第四十五研究所,北京 100176)

摘要:对多孔低k 介质BD(Black Diamond)光片化学机械抛光(CMP)后,采用由150 mg/L FA/O II 型螯合剂与750 mg/L FA/O II 型表面活性剂组成的碱性清洗液(pH = 10.4)进行清洗。探究了清洗过程中刷子间距、刷子转速,以及清洗液和去离子水刷洗时间对BD 的k 值和清洗效果的影响。得到较优的清洗工艺条件为:刷子间距−0.5 mm,刷子转速200 r/min,清洗液刷洗时间40 s,去离子水刷洗时间75 s。在该条件下的清洗效果良好,BD 表面粗糙度为0.24 nm,k 值的变化率低于5%。

关键词:多孔绝缘介质;化学机械抛光;碱性清洗;相对介电常数;表面粗糙度

中图分类号:TN305.2 

文献标志码:A 

文章编号:1004 – 227X (2019) 08 – 0338 – 06

Effect of cleaning process on porous low-k dielectrics after chemical mechanical planarization // HAN Chun-yu,TAN Bai-mei*, GAO Bao-hong, YANG Liu, LIU Yi-lin, WANG Hao, ZANG Jun-sheng, WANG Hui

Abstract: The porous low-k dielectric BD (Black Diamond) was cleaned in an alkaline solution comprising 150 mg/L FA/O II chelating agent and 750 mg/L FA/O II surfactant after chemical mechanical planarization (CMP). The effects of several factors such as spacing between brushes, rotation speed of brushes, and time for brushing with the alkaline solution and deionized water respectively on the k value of BD and cleaning efficiency were studied. The optimal conditions were determined as follows: spacing between brushes −0.5 mm, rotation speed of brushes 200 r/min, alkaline brushing time 40 s,and deionized water brushing time 75 s. The cleaning efficiency was good as shown by a surface roughness of 0.24 nm for BD and a change rate of less than 5% for its k value after cleaning.

Keywords: porous dielectric; chemical mechanical planarization; alkaline cleaning; relative permittivity; surface roughness

First-author’s address: School of Electronic Information Engineering, Hebei University of Technology, Tianjin 300130,China

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